EIN SELEKTIVMEDIUM ZUM NACHWEIS VON HEFEN IN SCHLEIMHAUTABSTRICHEN = MILIEU SELECTIF POUR L'ISOLEMENT DE LEVURES A PARTIR DE PRELEVEMENTS DE MUQUEUSES DE LA PEAURADEMACHER KH; SKURAS E; WACHTEL D et al.1978; Z. MED. LAB.-DIAGNOST.; DDR; DA. 1978; VOL. 19; NO 4; PP. 268-270; ABS. RUS/ENG; BIBL. 4 REF.Article

Eigenfunctions and eigenvalues of the squeeze operator in quantum opticsJANNUSSIS, A; SKURAS, E.Il Nuovo cimento. B. 1986, Vol 95, Num 1, pp 63-70, issn 0369-3554Article

Tight-binding model and Harper's equations are partial cases of the Caldirola-Montaldi procedureJANNUSSIS, A; PAPATHEOU, V; SKURAS, E et al.Il Nuovo cimento. B. 1988, Vol 101, Num 4, pp 467-477, issn 0369-3554Article

Anharmonic periodic modulation in lateral surface superlatticesCUSCO, R; HOLLAND, M. C; DAVIES, J. H et al.Surface science. 1994, Vol 305, Num 1-3, pp 643-647, issn 0039-6028Conference Paper

Quantum transport measurements of Si δ- and slab-doped In_0.53Ga_0.47As grown by molecular beam epitaxyMCELHINNEY, M; SKURAS, E; HOLMES, S. N et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 266-270, issn 0022-0248, 1Conference Paper

The effect of growth temperature, δ-doping and barrier composition on mobilities in shallow AlGaAs-GaAs two-dimensional electron gasesHOLLAND, M. C; SKURAS, E; DAVIES, J. H et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1215-1219, issn 0022-0248, 2Conference Paper

X-ray and neutron reflectivity studies of self-assembled InAs quantum dots stacks on GaAs (100)ANAGNOSTOPOULOS, D. F; SKURAS, E; STANLEY, C et al.Journal of alloys and compounds. 2009, Vol 483, Num 1-2, pp 414-417, issn 0925-8388, 4 p.Conference Paper

Electron transport in shallow heterostructures with AlGaAs and AlAs barriersSKURAS, E; HOLLAND, M. C; BARTON, C. J et al.Semiconductor science and technology. 1995, Vol 10, Num 7, pp 922-929, issn 0268-1242Article

Potential modulation under lateral surface superlatticesCUSCO, R; SKURAS, E; VALLIS, S et al.Superlattices and microstructures. 1994, Vol 16, Num 3, pp 283-286, issn 0749-6036Article

Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBEPARKER, S. D; WILLIAMS, R. L; ZHANG, X et al.Semiconductor science and technology. 1989, Vol 4, Num 8, pp 663-676, issn 0268-1242Article

Fabrication of Large Surface Area Semitransparent Monocrystalline Si Solar CellsMAKRIS, Th; TSEVAS, K; KADYLIS, L et al.Journal of solar energy engineering. 2013, Vol 135, Num 3, issn 0199-6231, 034503.1-034503.4Article

Optimization of layer structure for InGaAs channel pseudomorphic HEMTsPEARSON, J. L; HOLLAND, M. C; STANLEY, C. R et al.Journal of crystal growth. 1999, Vol 201202, pp 757-760, issn 0022-0248Conference Paper

Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limitSKURAS, E; KUMAR, R; SINGLETON, J et al.Semiconductor science and technology. 1991, Vol 6, Num 6, pp 535-546, issn 0268-1242, 12 p.Article